| PART |
Description |
Maker |
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| MG600Q2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| IXDN75N120 L209 |
High Voltage IGBT
IGBT Discretes: NPT IGBT
From old datasheet system
High Voltage IGBT 150 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| MG25Q2YS40 E002219 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 硅N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
|
Integrated Device Technology, Inc.
Toshiba Semiconductor
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| RJH60F4DPK RJH60F4DPK-00-T0 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP6085DPK-15 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F4DPK11 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP6085DPN-15 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| MG50H2YS1 |
High Power Switching Application / Silicon N-Channel IGBT
|
Toshiba
|
